Specimen preparation for off-axis electron holography using focused ions, energy filters and laser beams

Focused ion beam milling is routinely used to prepare specimens with nm-scale site specificity for examination by transmission electron microscopy. Although low-energy milling techniques can be used to prepare excellent specimens for many TEM-based techniques, the case is more complicated for dopant...

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Bibliographic Details
Published in:Journal of physics. Conference series 2010-02, Vol.209 (1), p.012051
Main Authors: Cooper, D, Aventurier, B, Templier, F, Chabli, A, Salles, P H, Benassayag, G
Format: Article
Language:English
Subjects:
Crystal defects
Dopants
Electron beams
Holography
Ion beams
Laser beams
Physics
Semiconductor devices
Semiconductors
Specimen preparation
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Summary:Focused ion beam milling is routinely used to prepare specimens with nm-scale site specificity for examination by transmission electron microscopy. Although low-energy milling techniques can be used to prepare excellent specimens for many TEM-based techniques, the case is more complicated for dopant profiling. Off-axis electron holography can in principle be used to provide 2D dopant maps of semiconductor devices. However, artefacts such as Ga implantation and the introduction of defects deep in the crystalline regions of the specimens significantly change the properties of the doped semiconductors. In this paper we discuss methods that can be used to remove the artefacts that are present in FIB-prepared semiconductors.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/209/1/012051