Non-equilibrium methods for synthesis and modification of gallium oxide

• Published in: Journal of physics. Conference series 2021-11, Vol.2103 (1), p.12062
• Main Authors: Nikolskaya, A A, Korolev, D S, Mikhaylov, A N, Mullagaliev, T D, Chigirinsky, Yu I, Belov, A I, Nezhdanov, A V, Trushin, V N, Nikolichev, D E, Almaev, A V, Giulian, R, Kumar, M, Tetelbaum, D I
• Format: Article
• Language: English
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/2103/1/012062

Synthesis and modification of gallium oxide as a wide-bandgap semiconductor is a topical task in the fields of power electronics, UV detectors, gas sensors, telecommunication. In the present work, the Ga2O3 films deposited on sapphire substrates by magnetron sputtering have been studied. The influence of deposition parameters and subsequent annealing on the structure and optical properties of the synthesized films is analyzed. Ion doping of magnetron-deposited films with silicon is carried out by the ion implantation method. It is shown by the Raman scattering and optical transmission spectroscopy that ion irradiation leads to the disordering of the crystal structure, but subsequent annealing results in a partial recovery of the structure. Hall-effect measurements for irradiated and then annealed films do not reveal the formation of a conducting layer. Apparently, this is due to the fact that the main contribution to the resistance is made by grain boundaries in the magnetron-deposited films.