The dependence of surface morphology on the growth temperature of the Pb 0.7 Sn 0.3 Te/Si(111) topological insulator thin films

The possibility of epitaxial growth of Pb 0.7 Sn 0.3 Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, t...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-11, Vol.2103 (1), p.12086
Main Authors: Kaveev, A K, Bondarenko, D N, Tereshchenko, O E
Format: Article
Language:English
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Summary:The possibility of epitaxial growth of Pb 0.7 Sn 0.3 Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb 0.7 Sn 0.3 Te surface.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2103/1/012086