Schottky diodes based on 4H-SiC epitaxial layers

Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 10 15 cm -3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of t...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-11, Vol.2103 (1), p.12235
Main Authors: Strel’chuk, A M, Kalinina, E V
Format: Article
Language:English
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Summary:Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 10 15 cm -3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2103/1/012235