Different parameter values of Gaussian function analysis on EMI reduction and switching loss in active gate drive of SiC MOSFET

Nowadays, wide bandgap(WBG) devices named SiC and GaN were widely used in power electronics system to improve power density and switching speed, meanwhile, electromagnetic interference(EMI) becomes a major drawback in power electronics system based on wide bandgap devices. This article discusses the...

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Bibliographic Details
Published in:Journal of physics. Conference series 2022-02, Vol.2196 (1), p.12033
Main Authors: Li, Chentao, Ma, Qishuang, Xu, Ping
Format: Article
Language:English
Subjects:
Electromagnetic interference
Electronics
Energy gap
Function analysis
MOSFETs
Parameters
Physics
Reduction
Silicon carbide
Switching
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Summary:Nowadays, wide bandgap(WBG) devices named SiC and GaN were widely used in power electronics system to improve power density and switching speed, meanwhile, electromagnetic interference(EMI) becomes a major drawback in power electronics system based on wide bandgap devices. This article discusses the influence of different parameter values in Gaussian function on EMI suppression, and a trade-off between EMI and losses was also discussed. Experiments were given in this article to analyze different parameter values effect on EMI reduction. This article can give guidance in the Gaussian function generated when used in active gate drive to reduce EMI.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2196/1/012033