Memory Performance Enhancement by Inducing Conductive Channel via Doping

Due to the excellent nonvolatile resistance characteristics demonstrated by hafnium oxide, it is the potential to facilitate the use of resistive random access memory. In this paper, an ingenious method using doping to locate conductive channels is presented to improve the stable rheostatic performa...

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Bibliographic Details
Published in:Journal of physics. Conference series 2023-08, Vol.2566 (1), p.12131
Main Authors: He, Hongyang, Li, Tiejun, Lin, Yuxiang, Yang, Shuya, Li, Maojing, Pan, Jinyan
Format: Article
Language:English
Subjects:
Doping
Electric fields
Filaments
Hafnium oxide
Metal particles
Performance enhancement
Physics
Random access memory
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Summary:Due to the excellent nonvolatile resistance characteristics demonstrated by hafnium oxide, it is the potential to facilitate the use of resistive random access memory. In this paper, an ingenious method using doping to locate conductive channels is presented to improve the stable rheostatic performance of HfO 2 -based rheostatic memory. Metal particles are located to enhance the electric field locally to spur on conductive filaments in situ so that the resistive parameters V set and V reset are reduced, the relative fluctuation value (standard deviation/mean) of the V set is reduced from 22.57% to 18.16%, and that of V reset is reduced from 19.59% to 16.77%. Consequently, the device gains more stable resistance switching with a larger resistive window.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2566/1/012131