Comparative study of the sidewall shape and proximity effect in bilayer electron beam resist systems

The experimental investigation and simulation of electron beam lithography (EBL) for bilayer and trilayer resist systems have been carried out. Important parameters of the EBL process, such as dissolution rate, resolution, absorbed energy, and resist profile in the investigated bilayer resist system...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2024-02, Vol.2710 (1), p.12011
Main Authors: Nemec, P, Vutova, K, Bencurova, A, Andok, R, Kostic, I
Format: Article
Language:English
Subjects:
Bilayers
Comparative studies
Electron beam lithography
Multilayers
Process parameters
Shape effects
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The experimental investigation and simulation of electron beam lithography (EBL) for bilayer and trilayer resist systems have been carried out. Important parameters of the EBL process, such as dissolution rate, resolution, absorbed energy, and resist profile in the investigated bilayer resist systems, have been studied and discussed. Various combinations of resist layers with positive electron resist have been proposed to examine the effects of lithographic process parameters on the resist profile. The results of this work are intended for use in multilayer resist systems to produce high-frequency electronics, where the fabrication of a T-shaped gate is one of the most crucial processes.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2710/1/012011