Calculating the Density Energy of Se 100-X Ge X and Se 62 Ge 35 X 3 Semiconductor Materials

• Published in: Journal of physics. Conference series 2024-05, Vol.2754 (1), p.12013
• Main Authors: Hasan Azzawi, Jannah, Ayad Abdulmajeed, Marwa, Mahdi Wadi, Kassim, Ali Jasim, Kareem, Shaban, Auday H.
• Format: Article
• Language: English
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/2754/1/012013

In this paper, chalcogenide glasses are studied using a range of experimental techniques for the purpose of understanding their electrical properties with the aim of providing new strategies for producing a new class of electronic devices made of advanced amorphous materials. The electrical properties of chalcogenide glass are very low cost to produce competitive devices; hence, a deeper understanding of their electrical transport properties may provide the necessary insight to enhance merit. For this purpose, the electrical properties studied by some researchers were relied upon, mathematical equations were performed and the program is designed to compute the energy state density in both extended and localized systems region of Se 100-x Gex with (x = 5, 25, 28, 30 and 38) and Se 62 Ge 35 X 3 glasses (where X is Sb, Sn, or Bi) in different concentrations. Characterizing the electrical properties of Se 100-x Gex and Se 62 Ge 35 X 3 glasses use to determine the density of energy states. The results of electrical measurements confirmed the presence of two mechanisms of electrical conduction: conduction in extended states at high temperatures and conduction in localized states at medium temperatures. Effective substitution results in a change in the local and extended state coefficients. This effect was measured as a function of concentration.