Effects of the preparation conditions of GaAs nanowires in MBE on their optical properties

The study investigated the morphology, optical properties, and crystal quality of GaAs nanowires (NWs) produced through one/two temperature molecular beam epitaxy (MBE). It is shown that NWs prepared at two temperatures have larger diameters and lengths than those prepared at one temperature. To inv...

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Bibliographic Details
Published in:Journal of physics. Conference series 2024-06, Vol.2783 (1), p.12018
Main Authors: Meng, Bingheng, Kang, Yubing, Tang, Jilong, Wei, Zhipeng
Format: Article
Language:English
Subjects:
Crystal defects
Crystal growth
Gallium arsenide
Luminescence
Molecular beam epitaxy
Nanowires
Optical properties
Photoluminescence
Quantum wells
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Summary:The study investigated the morphology, optical properties, and crystal quality of GaAs nanowires (NWs) produced through one/two temperature molecular beam epitaxy (MBE). It is shown that NWs prepared at two temperatures have larger diameters and lengths than those prepared at one temperature. To investigate the optical properties of NWs, we conducted photoluminescence (PL) measurements. The results indicate that the intensity of the luminescence from the type II quantum well increases significantly, while the defect luminescence is suppressed. Moreover, X-ray diffraction (XRD) tests demonstrate a marked enhancement in the crystal quality of samples grown at two temperatures.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2783/1/012018