Self-catalyzed Growth and Optoelectronic Properties of High-Quality CsPbBr 3 and CsPbI 3 Nanowires Based on Chemical Vapor Deposition

• Published in: Journal of physics. Conference series 2024-08, Vol.2809 (1), p.12037
• Main Authors: Huang, Lanqing, Lu, Hanglin, Liu, Xingpeng, Song, Zhuo, Su, Jiande, Li, Zhuofeng, Song, Shuxiang, Liu, Linsheng
• Format: Article
• Language: English
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/2809/1/012037

In this work, high-quality CsPbBr 3 and CsPbI 3 nanowires were successfully grown on Si substrates via a vapor-liquid-solid (VLS) self-catalyzed growth mechanism using chemical vapor deposition (CVD). The nanowires were characterized by various techniques, including Scanning Electron Microscopy (SEM), Photoluminescence (PL), and Raman spectroscopy. The results demonstrate that the perovskite nanowires grown under the VLS mechanism exhibit strong photoluminescence intensity and excellent crystalline quality. Based on these high-quality nanowires, we further fabricated single-nanowire photodetectors. The CsPbBr 3 nanowire photodetector exhibited a high photocurrent to dark current ratio of 4.2×10 3 and an outstanding responsivity of 1338 A/W. Meanwhile, the CsPbI 3 nanowire photodetector also showed a photocurrent to dark current ratio of 10.6 and a responsivity of 991 A/W. These results indicate that perovskite nanowires grown by the VLS growth mechanism hold great promise for applications in photodetection.