Evaluating the Efficiency of CuInGaSe 2 Based Solar Cells: CuSCN Hole Transport Layer (HTL) Effect

Copper indium gallium disulfide (CuInGaSe 2 ) or (CIGS) based solar cells are emerging solar cell structures that have attracted significant interest in recent years. In this research, a SCAPS-1D simulator was used to investigate the performance of the proposed CIGS based solar cell under the effect...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2024-09, Vol.2843 (1), p.12012
Main Authors: Zaidi, B., Mekhaznia, N., Ullah, M. S., Al-Dmour, H.
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Copper indium gallium disulfide (CuInGaSe 2 ) or (CIGS) based solar cells are emerging solar cell structures that have attracted significant interest in recent years. In this research, a SCAPS-1D simulator was used to investigate the performance of the proposed CIGS based solar cell under the effect of a copper (I) thiocyanate (CuSCN) hole transport layer (HTL). Different photovoltaic parameters, such as the efficiency, short circuit current density (J sc ) and open-circuit voltage (V oc ), are observed with respect to the doping concentration, temperature, and thickness. A comparative study is presented between a hole transport layer (HTL) and without an HTL. The simulation results demonstrate that the HTL has a significant impact and plays a major role in improving the performance of the proposed CIGS solar cell structure compared to that without the HTL. This research outlines a structured guide for both the manufacturing process and achievement of cost-effective, highly efficient solar cells.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2843/1/012012