InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems

This paper presents terahertz detectors based on high performance 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology and reports on the analysis of their voltage responsivity over a wide frequency range of the incoming terahertz radiation. The detectors operated without any spatia...

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Bibliographic Details
Published in:Journal of physics. Conference series 2015-10, Vol.647 (1), p.12036
Main Authors: Coquillat, D, Nodjiadjim, V, Konczykowska, A, Dyakonova, N, Consejo, C, Ruffenach, S, Teppe, F, Riet, M, Muraviev, A, Gutin, A, Shur, M, Godin, J, Knap, W
Format: Article
Language:English
Subjects:
Broadband
Detectors
Frequency ranges
Heterojunction bipolar transistors
Image transmission
Physics
Radiation
Raster scanning
Room temperature
Semiconductor devices
Sensors
Terahertz frequencies
Transistors
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Summary:This paper presents terahertz detectors based on high performance 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology and reports on the analysis of their voltage responsivity over a wide frequency range of the incoming terahertz radiation. The detectors operated without any spatial antennas to couple terahertz radiation to the device and have been characterized in the 0.25 - 3.1 THz range with the responsivities (normalized to 1 W radiant power) of 5 V W and 200 μV W measured at 0.35 THz and 3.11 THz, respectively. The InP DHBTs also performed as the imaging single-pixels at room temperature in the raster scanned transmission mode. A set of the sub-terahertz images of plant leaves suggest potential utility of InP DHBT detectors for terahertz imaging dedicated to non-invasive testing of plants.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/647/1/012036