TCAD study of sub-THz photovoltaic response of strained-Si MODFET

This paper reports on a bi-dimensional TCAD study of the sub-THz response of strained-Si MODFETs. A charge boundary condition for the floating drain contact was implemented to obtain the photovoltaic (PV) response of the device. A non-resonant THz PV response was obtained in agreement with theoretic...

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Bibliographic Details
Published in:Journal of physics. Conference series 2015-10, Vol.647 (1), p.12041
Main Authors: Notario, J A Delgado, Meziani, Y M, Velázquez-Pérez, J E
Format: Article
Language:English
Subjects:
Boundary conditions
MODFETs
Photovoltaic cells
Physics
Topology
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Summary:This paper reports on a bi-dimensional TCAD study of the sub-THz response of strained-Si MODFETs. A charge boundary condition for the floating drain contact was implemented to obtain the photovoltaic (PV) response of the device. A non-resonant THz PV response was obtained in agreement with theoretical and experimental works. A main result of this study is that the PV response is strongly influenced by both the gate length and the gate topology. In particular, it was found that a dual-finger gate gives the maximum response at 300GHz.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/647/1/012041