Model of mode-locked quantum-well semiconductor laser based on InGaAs InGaAlAs InP heterostructure

We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs InGa...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-08, Vol.741 (1), p.12079
Main Authors: Rybalko, D A, Polukhin, I S, Solov'ev, Y V, Mikhailovskiy, G A, Odnoblyudov, M A, Gubenko, A.E., Livshits, D.A., Firsov, A.N., Kirsyaev, A.N., Efremov, A.A., Bougrov, V E
Format: Article
Language:English
Subjects:
Heterostructures
Indium gallium arsenides
Laser applications
Lasers
Mathematical models
Physics
Quantum wells
Semiconductor lasers
Traveling waves
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Summary:We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs InGaAlAs laser structure emitting at 1,55 um.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/741/1/012079