Interactions between graphene oxide and wide band gap semiconductors

The graphene oxide (GO) and GO@TiO2 nanocomposite have been synthesised by using modified Hummers method and ultrasonics respectively. The materials were characterized by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis absorption spectroscopy. It was found that the intera...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-09, Vol.745 (3), p.32102
Main Authors: Kawa, M, Podborska, A, Szaci owski, K
Format: Article
Language:English
Subjects:
Carbonaceous materials
Charge transfer
Chemical bonds
Fourier transforms
Functional groups
Graphene
Infrared spectroscopy
Interlayers
Nanocomposites
Physics
Quinones
Spectrum analysis
Titanium
Titanium dioxide
Wide bandgap semiconductors
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Summary:The graphene oxide (GO) and GO@TiO2 nanocomposite have been synthesised by using modified Hummers method and ultrasonics respectively. The materials were characterized by using X-ray diffraction, Fourier transform infrared spectroscopy and UV-Vis absorption spectroscopy. It was found that the interaction between GO and TiO2 affects the average interlayer spacing in carbonaceous material. The formation of bonds between various oxygen-containing functional groups and surface of titanium dioxide was investigated. One of them formed between the quinone structures (occur in graphene oxide) and titanium atoms exhibited 1.5 bond order. Furthermore the charge-transfer processes in GO@TiO2 composite were observed.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/745/3/032102