Effect of nitride chemical passivation of the surface of GaAs photodiodes on their characteristics

Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air an...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-11, Vol.769 (1), p.12068
Main Authors: Kontrosh, E V, Lebedeva, N M, Kalinovskiy, V S, Soldatenkov, F Yu, Ulin, V P
Format: Article
Language:English
Subjects:
Gallium nitrides
Hydrazines
Oxidation
Photodiodes
Physics
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Summary:Characteristics of GaAs photodiodes have been studied before and after the chemical nitridation of their surface in hydrazine sulfide solutions, which leads to substitution of surface As atoms with N atoms to give a GaN monolayer. The resulting nitride coatings hinder the oxidation of GaAs in air and provide a decrease in the density of surface states involved in recombination processes. The device characteristics improved by nitridation are preserved during a long time.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/769/1/012068