Researching the electrical properties of single A3B5 nanowires

We investigate electrical characteristics of GaN, GaAs and GaP NWs which are grown with MOCVD and MBE. We developed measurement technique and it allows to determine the required properties of the structures.

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.917 (3), p.32042
Main Authors: Vasiliev, A A, Mozharov, A M, Komissarenko, F E, Cirlin, G E, Bouravlev, D A, Mukhin, I S
Format: Article
Language:English
Subjects:
Electrical properties
Measurement techniques
Nanowires
Physics
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Description
Summary:We investigate electrical characteristics of GaN, GaAs and GaP NWs which are grown with MOCVD and MBE. We developed measurement technique and it allows to determine the required properties of the structures.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/3/032042