High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics

We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and internal capacitance was 0.025 pF. Microwave model of ph...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.917 (5), p.52029
Main Authors: Kozyreva, O A, Solov'ev, Y V, Polukhin, I S, Mikhailov, A K, Mikhailovskiy, G A, Odnoblyudov, M A, Gareev, E Z, Kolodeznyi, E S, Novikov, I I, Karachinsky, L Ya, Egorov, A Yu, Bougrov, V E
Format: Article
Language:English
Subjects:
Broadband
Circuits
Heterostructures
High speed
Indium phosphides
Microwave photonics
Photoconductivity
Photometers
Physics
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Summary:We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and internal capacitance was 0.025 pF. Microwave model of photodetector was developed and verified by measurements of scattering matrix. The implementation of broadband (up to 20 GHz) hybrid integrated matching and biasing circuit for high-speed photodetector is presented.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/5/052029