BCB Bonding Technology of Back-Side Illuminated COMS Device

Back-side illuminated CMOS(BSI) sensor is a key device in spaceborne hyperspectral imaging technology. Compared with traditional devices, the path of incident light is simplified and the spectral response is planarized by BSI sensors, which meets the requirements of quantitative hyperspectral imagin...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Conference series 2018-03, Vol.986 (1), p.12023
Main Authors: Wu, Y, Jiang, G Q, Jia, S X, Shi, Y M
Format: Article
Language:English
Subjects:
Bonding strength
CMOS
Hyperspectral imaging
Incident light
Physics
Sensors
Spectral sensitivity
Stability
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Back-side illuminated CMOS(BSI) sensor is a key device in spaceborne hyperspectral imaging technology. Compared with traditional devices, the path of incident light is simplified and the spectral response is planarized by BSI sensors, which meets the requirements of quantitative hyperspectral imaging applications. Wafer bonding is the basic technology and key process of the fabrication of BSI sensors. 6 inch bonding of CMOS wafer and glass wafer was fabricated based on the low bonding temperature and high stability of BCB. The influence of different thickness of BCB on bonding strength was studied. Wafer bonding with high strength, high stability and no bubbles was fabricated by changing bonding conditions.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/986/1/012023