Non-equilibrium hole capture to excited acceptor states in quantum wells due to optical scattering

The probability of optical-phonon-assisted scattering of non-equilibrium holes to excited acceptor states in GaAs/AlGaAs quantum wells is considered. In the model we used, a well-known expression for the probability of intersubband optical scattering of two-dimensional carriers was expanded to the c...

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Bibliographic Details
Published in:Journal of physics. Conference series 2018-03, Vol.993 (1), p.12016
Main Authors: Balakhtar, G R, Sofronov, A N, Vinnichenko, M Ya, Firsov, D A, Vorobjev, L E
Format: Article
Language:English
Subjects:
Electroluminescence
Phonons
Physics
Quantum wells
Scattering
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Summary:The probability of optical-phonon-assisted scattering of non-equilibrium holes to excited acceptor states in GaAs/AlGaAs quantum wells is considered. In the model we used, a well-known expression for the probability of intersubband optical scattering of two-dimensional carriers was expanded to the case when the final hole state is the excited state of an acceptor center. The temperature dependences of the probability of hole capture to excited acceptor states with simultaneous optical phonon emission are calculated. The result allows one to estimate the contribution of optical scattering to the experimentally observed terahertz electroluminescence due to intracenter carrier transitions.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/993/1/012016