Source-drain electrical conduction and radiation detection in graphene-based field effect transistor (GFET)

• Published in: Journal of instrumentation 2022-02, Vol.17 (2), p.P02008
• Main Authors: Torrisi, L., Salvato, G., Cutroneo, M., Librizzi, F., Torrisi, A., Silipigni, L.
• Format: Article
• Language: English
• Subjects: Conduction heating; Continuous radiation; Current carriers; Electrical conduction; Electrical measurement; Field effect transistors; Graphene; Materials for solid-state detectors; Near infrared radiation; Oxidation; Photon detectors for UV, visible and IR photons (solid-state); Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc); Radiation damage to detector materials (solid state); Radiation detectors; Semiconductor devices; Transistors; Ultraviolet radiation
• ISSN: 1748-0221; 1748-0221
• DOI: 10.1088/1748-0221/17/02/P02008

Electrical measurements on a graphene field effect transistor (GFET) are presented and discussed for its characterization in vacuum and in air. In this last environment three low output power continuous wave (CW) led lasers and a UV lamp have been used to study the illumination effects at wavelengths from the near infrared (NIR) to red, green up to near UV. In air the device is sensitive to visible and UV radiation. The visible light produces charge carriers increasing the source-drain current. Instead, the UV radiation induces the graphene oxidation decreasing the source-drain current in a permanent way. Small temperature increments, up to about 55 ∘ C, increase the electrical conduction. Larger temperatures and prolonged heating in air generate oxidation, decreasing the source-drain current. As far as the NIR radiation is concerned, no effect is observed. Therefore, these preliminary investigations indicate that the device can be employed as visible and UV radiation detector.