The Influence to Uniform Current Distribution of SiC MOSFET Modules Based on the 3 rd Quadrant Characteristics

This paper concentrated on the 3 rd quadrant characteristics of 1200V/300A full SiC MOSFET modules produced by four SiC mainstream manufacturers; and compared the diode forward voltage (V SD ) performances of “SiC MOSFET only” and SiC MOSFETs modules with SiC Schottky barrier parallel diode. The cha...

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Bibliographic Details
Published in:IOP conference series. Earth and environmental science 2021-05, Vol.772 (1), p.12032
Main Authors: Lu, Wenhao, Wan, Caiping, Zhang, Xizi, Du, Yujie, Ge, Niannian, Xu, Hengyu, Ye, Tianchun
Format: Article
Language:English
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Summary:This paper concentrated on the 3 rd quadrant characteristics of 1200V/300A full SiC MOSFET modules produced by four SiC mainstream manufacturers; and compared the diode forward voltage (V SD ) performances of “SiC MOSFET only” and SiC MOSFETs modules with SiC Schottky barrier parallel diode. The characteristics of the diode forward voltage showed that module A exhibits the same trend with the PiN diode, whereas modules B, C and D exhibit the characteristics of SBD. Through the failure analysis, it was verified that there is no parallel SBD in module A, meanwhile, it was assumed that modules B, C and D integrate a positive temperature characteristic SBD by wire bonding. The existence of SBD can prevent the modules from burning out due to excessive heating caused by non-uniform current distribution. From the analysis, it illustrated that the body diode can be used as the parallel SiC SBD, but further research on the uniform current distribution of the the body diode is needed.
ISSN:1755-1307
1755-1315
DOI:10.1088/1755-1315/772/1/012032