Study of Ar+ and He+ implanted SOS-structures

In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4 He + and 40 Ar + are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron. It is shown that ions 40 Ar+ in Silicon – on -...

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Bibliographic Details
Published in:IOP conference series. Earth and environmental science 2021-11, Vol.906 (1), p.12022
Main Authors: Bibilashvili, Amiran, Jibuti, Lado, Jibuti, Zurab, Skhiladze, Givi
Format: Article
Language:English
Subjects:
Divacancies
Gettering
Ions
Nanostructure
Optical properties
Optical reflection
Silicon
Work functions
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Summary:In the work Silicon – on - insulator nanostructures after implantation by various doses of ions 4 He + and 40 Ar + are investigated. Researches were carried out by measurement of optical reflection spectrum and magnitude of work function of an electron. It is shown that ions 40 Ar+ in Silicon – on - insulator nanostructures, providing high efficiency of gettering influence, incorporate the neutral divacancy responsible for an observable minimum in ranges of reflection 0.73-0.75eV. As a result of implanted by ions 4 He + the gettering doesn’t occur and the entered defects are divacancies with one negative charge, responsible for an observable maximum in reflection ranges 0.73-0.75eV. The received results indicate possibility of purposeful updating of Silicon – on - insulator nanostructures for improvement of their optical characteristics. Start your abstract here… The abstract should include the purpose of research, principal results and major conclusions. References should be avoided, if it is essential, only cite the author(s) and year(s) without giving reference list. Prepare your abstract in this file and then copy it into the registration web field.
ISSN:1755-1307
1755-1315
DOI:10.1088/1755-1315/906/1/012022