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Impact of recombination on heavy ion induced single event upset cross-section
The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.
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Published in: | IOP conference series. Materials Science and Engineering 2016-10, Vol.151 (1), p.12040 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET. |
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ISSN: | 1757-8981 1757-899X |
DOI: | 10.1088/1757-899X/151/1/012040 |