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Impact of recombination on heavy ion induced single event upset cross-section

The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2016-10, Vol.151 (1), p.12040
Main Authors: Zemtsov, K S, Galimov, A M, Gorchichko, M E, Elushov, I V
Format: Article
Language:English
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Description
Summary:The experimental dependence of the single event upset (SEU) cross-section versus linear energy transfer (LET) function in the nanoscale (with feature size less than 100 nm) memories is explained with the proposed recombination-limited charge yield, which is significantly dependent on LET.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/151/1/012040