Temperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of the AlGaN/GaN transistor heterostructure based on Ti/Al/Ni/Au metallization. The Al-Ti-N system has been assessed on the basis of available thermodynamic descriptions for binary subsystems. The effe...

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Bibliographic Details
Published in:IOP conference series. Materials Science and Engineering 2019-04, Vol.498 (1), p.12019
Main Authors: Shostachenko, S A, Porokhonko, Y A, Zakharchenko, R V, Leshchev, S V, Maslov, M M, Katin, K P
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Contact resistance
Gallium nitrides
Heterostructures
Metallizing
Nickel
Subsystems
Titanium
Transistors
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Summary:This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of the AlGaN/GaN transistor heterostructure based on Ti/Al/Ni/Au metallization. The Al-Ti-N system has been assessed on the basis of available thermodynamic descriptions for binary subsystems. The effect of annealing temperature on the specific resistance of Ohmic contact was studied.
ISSN:1757-8981
1757-899X
1757-899X
DOI:10.1088/1757-899X/498/1/012019