Loading…
Micro-photoluminescence study of single GaAsSb/GaAs radial and axial heterostructured core-shell nanowires
We report on the low temperature micro-photoluminescence (μ-PL) of single GaAs/AlGaAs core-shell nanowires (NWs) with axial GaAsSb core-inserts grown by Au-assisted molecular beam epitaxy. The GaAs NW core has hexagonal wurtzite (WZ) crystal structure, whereas the GaAsSb NW core-insert has cubic zin...
Saved in:
Published in: | IOP conference series. Materials Science and Engineering 2009-11, Vol.6 (1), p.012001-012001 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We report on the low temperature micro-photoluminescence (μ-PL) of single GaAs/AlGaAs core-shell nanowires (NWs) with axial GaAsSb core-inserts grown by Au-assisted molecular beam epitaxy. The GaAs NW core has hexagonal wurtzite (WZ) crystal structure, whereas the GaAsSb NW core-insert has cubic zinc blende (ZB) crystal structure. The upper GaAsSb/GaAs interface contains a few nm thin cubic ZB GaAs segment just before the crystal structure switches back to WZ. By adding a growth interruption (GI) directly after the GaAsSb insert, the ZB GaAs segment in the WZ GaAs barrier can be avoided. This GI-induced crystal structure change of the upper GaAs barrier next to the GaAsSb/GaAs interface makes a large difference on the PL properties from the GaAsSb NW core-inserts. This is believed to be due to that the GaAsSb/GaAs heterojunction band alignment is changed from type II to type I when the GaAs crystal structure is changed from ZB to WZ. |
---|---|
ISSN: | 1757-899X 1757-8981 1757-899X |
DOI: | 10.1088/1757-899X/6/1/012001 |