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Huge operation by energy gap of novel narrow band gap Tl 1− x In 1− x B x Se 2 (B = Si, Ge): DFT, x-ray emission and photoconductivity studies

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Bibliographic Details
Published in:Materials research express 2016-02, Vol.3 (2), p.25902
Main Authors: Piasecki, M, Myronchuk, G L, Zamurueva, O V, Khyzhun, O Y, Parasyuk, O V, Fedorchuk, A O, Albassam, A, El-Naggar, A M, Kityk, I V
Format: Article
Language:English
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ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/3/2/025902