Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire

This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low tem...

Full description

Saved in:
Bibliographic Details
Published in:Materials research express 2017-01, Vol.4 (1), p.15007-015007
Main Authors: Ahmed, Kawser, Dahal, Rajendra, Weltz, Adam, Lu, James J-Q, Danon, Yaron, Bhat, Ishwara B
Format: Article
Language:English
Subjects:
Boron nitride
Chemical vapor deposition
Crystal structure
Epitaxial growth
growth temperature
hexagonal boron nitride
Optimization
Sapphire
sapphire nitridation
Vibration
Walls
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper reports on the epitaxial growth of hexagonal boron nitride (hBN) films on sapphire substrates in a cold wall chemical vapor deposition (CVD) system where different sapphire nitridation and hBN growth temperatures were employed. A thin and amorphous nitridated layer was formed at a low temperature (850 °C), which enabled subsequent epitaxial hBN growth at 1350 °C. The influences of the sapphire nitridation temperature and the growth temperature on the film quality were analyzed by x-ray diffraction (XRD) measurements. Higher than optimum nitridation and growth temperatures improve the crystalline quality of the nitridated layer, but does not favor the epitaxial growth of hBN. hBN films grown at the optimum conditions exhibit the c-lattice constant of 6.66 Å from the XRD θ-2θ scan and the characteristic in plane stretching vibration at 1370.5 cm−1 from Raman spectroscopy. X-ray photoelectron spectroscopy analysis confirmed the formation of stoichiometric hBN films with excellent uniformity.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/aa54d5