Structural, optical and electronic characteristics of N-doped graphene nanosheets synthesized using urea as reducing agent and nitrogen precursor

In the present study, nitrogen (N)-doped graphene nanosheets (NGns) have been synthesized by solvothermal method using urea both as the green precursor of N and as the reducing agent for graphene oxide (GO). As synthesized NGns have been characterized by x-ray diffraction (XRD), Raman spectroscopy,...

Full description

Saved in:
Bibliographic Details
Published in:Materials research express 2017-01, Vol.4 (1), p.15012-015012
Main Authors: Chamoli, Pankaj, Das, Malay K, Kar, Kamal K
Format: Article
Language:English
Subjects:
Fourier transforms
Graphene
Infrared spectroscopy
N-doped graphene
Nanostructure
Nitrogen
Precursors
sheet resistance
Spectroscopy
Synthesis
transmittance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the present study, nitrogen (N)-doped graphene nanosheets (NGns) have been synthesized by solvothermal method using urea both as the green precursor of N and as the reducing agent for graphene oxide (GO). As synthesized NGns have been characterized by x-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), UV-visible spectroscopy, field emission scanning electron microscopy (FESEM) and x-ray photon spectroscopy (XPS). The Raman D to G band intensity ratio (ID/IG), being a measure of defects in the honeycomb lattice, is used as an indicator for the formation of NGns. For GO:urea weight ratio of 1:5, high C to O atomic ratio (C/O) of ~8.75 with an N-content as high as ~8.3 at.% and high ID/IG ratio of 1.55 have been observed, which confirm the removal of oxygen functionalities from GO to form NGns. Further, transparent conducting films (TCFs) of the synthesized NGns have been fabricated by spray coating. Thermal graphitization of the TCFs has been performed to enhance their optical and electrical properties. When annealed at 900 °C for 1 h in vacuum, the film shows a best performance in terms of sheet resistance and transmittance values of ~1.63 k −1 and ~68.21%, respectively.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/aa5776