Development and characterization of photodiode from p-Cu 2 CdSnS 4 /n-Bi 2 S 3 heterojunction

• Published in: Materials research express 2020-01, Vol.7 (1), p.15909
• Main Authors: Suresh Kumar, M, Madhusudanan, Sreejith P, Mohanta, Kallol, Batabyal, Sudip K
• Format: Article
• Language: English
• ISSN: 2053-1591; 2053-1591
• DOI: 10.1088/2053-1591/ab65e1

Here we investigated the photo response behaviour of p -Cu 2 CdSnS 4 ( p -CCTS)/ n -Bi 2 S 3 heterojunction photodiode. The solution processed CCTS films without any high temperature sulfurization demonstrated the photo response behaviour, suggesting the material is well suited for low temperature processed photovoltaic applications. A CCTS film was deposited on an ITO coated glass substrate using simple sol-gel based spin coating method. Current–voltage (I–V) characteristic of the p -CCTS/ n -Bi 2 S 3 heterojunction photodiode showed a good rectifying behaviour indicating better junction formation between CCTS and Bi 2 S 3 layers. The obtained photocurrent is 4 times higher than that of the dark current. The I–V curves are asymmetric with respect to voltages and the photocurrent in the positive bias region is considerably higher than the corresponding values in the negative bias region. With these results, it is concluded that the CdS material in traditional thin film PV devices can be replaced with Bi 2 S 3 for better transportation of charge carriers in the PN -junction.