Pure spin current injection of single-layer monochalcogenides

We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron’s spins is calculated...

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Bibliographic Details
Published in:Materials research express 2023-03, Vol.10 (3), p.35003
Main Authors: Mendoza, Bernardo S, Grillo, Simone, Juárez-Reyes, Lucila, Fregoso, Benjamin M
Format: Article
Language:English
Subjects:
2D-monochalcogenides
ab-initio
Cadmium selenides
Current injection
Density functional theory
Electron spin
Ferroelectricity
Germanium sulfide
Linear polarization
MATERIALS SCIENCE
Orbital mechanics
Photons
Polarized light
spin current
Spin dynamics
Spin-orbit interactions
Spintronics
Tin selenide
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Summary:We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron’s spins is calculated as a function of incoming photon energy and angle of linearly polarized light within a full electronic band structure scheme using density functional theory. We find peak speeds of 520, 360, 270 and 370 Km s −1 for SnS, SnSe, GeS and GeSe, respectively which are an order of magnitude larger than those found in bulk semiconductors, e.g., GaAs and CdSe. Interestingly, the spin velocity is almost independent of the direction of polarization of light in a range of photon energies. Our results demonstrate that single-layer SnS, SnSe, GeS and GeSe are candidates to produce on demand spin-current in spintronics applications.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/acbf99