Electronic and quantum transport properties of a graphene-BN dot-ring hetero-nanostructure

Quantum dots, quantum rings, and, most recently, quantum dot-ring nanostructures have been studied for their interesting potential applications in nanoelectronic applications. Here, the electronic properties of a dot-ring hetero-nanostructure consisting of a graphene ring and graphene dot with a hex...

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Bibliographic Details
Published in:Journal of physics communications 2018-04, Vol.2 (4), p.45003
Main Authors: Seel, Max, Pandey, Ravindra
Format: Article
Language:English
Subjects:
boron nitride
dot-ring nanostructure
Graphene
nanoelectronics
quantum dot
Quantum dots
quantum ring
quantum transport
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Summary:Quantum dots, quantum rings, and, most recently, quantum dot-ring nanostructures have been studied for their interesting potential applications in nanoelectronic applications. Here, the electronic properties of a dot-ring hetero-nanostructure consisting of a graphene ring and graphene dot with a hexagonal boron nitride (h-BN) ring serving as barrier between ring and dot are investigated using density functional theory. Analysis of the character of the wave functions near the Fermi level and of the charge distribution of this dot-ring structure and calculations of the quantum transport properties find asymmetry in the conductance resonances leading to asymmetric I-V characteristics which can be modified by applying a negative voltage potential to the central graphene dot.
ISSN:2399-6528
2399-6528
DOI:10.1088/2399-6528/aab7df