Finite-length mask effects in the isolation oxidation of silicon

A moving-boundary problem modelling the two-dimensional isolation oxidation of silicon is analysed in the limit of reaction-controlled oxidation for a finite-length nitride mask. Encroachment under the mask caused by silicon oxidation then occurs from both sides to produce two ‘bird's beaks’, a...

Full description

Saved in:
Bibliographic Details
Published in:IMA journal of applied mathematics 1997-04, Vol.58 (2), p.121-146
Main Authors: EVANS, J. D., TAYLER, A. B., KING, J. R.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Function theory, analysis
Mathematical methods in physics
Partial differential equations
Physics
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A moving-boundary problem modelling the two-dimensional isolation oxidation of silicon is analysed in the limit of reaction-controlled oxidation for a finite-length nitride mask. Encroachment under the mask caused by silicon oxidation then occurs from both sides to produce two ‘bird's beaks’, and it is the interaction between these beaks on which attention is focused. This effect, termed ‘bird's beak punchthrough’, is currently of interest in submicron silicon-isolation technologies.
ISSN:0272-4960
1464-3634
DOI:10.1093/imamat/58.2.121