Origin of the Resistance-Area-Product Dependence of Spin-Transfer-Torque Switching in Perpendicular Magnetic Random-Access Memory Cells

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Bibliographic Details
Published in:Physical review applied 2020-02, Vol.13 (2), Article 024004
Main Authors: Mihajlović, G., Smith, N., Santos, T., Li, J., Tran, M., Carey, M., Terris, B.D., Katine, J.A.
Format: Article
Language:English
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ISSN:2331-7019
2331-7019
DOI:10.1103/PhysRevApplied.13.024004