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Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide ( Al 2 O 3 ) 1 − x ( Si O 2 ) x : First-Principles Exploration of Gate Oxides in Ga N -Based Power Devices

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Bibliographic Details
Published in:	Physical review applied 2020-07, Vol.14 (1), Article 014034
Main Authors:	Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Shiozaki, Koji, Kachi, Tetsu, Oshiyama, Atsushi, Shiraishi, Kenji
Format:	Article
Language:	English
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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