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Electronic structure of the substitutional versus interstitial manganese in GaN

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Bibliographic Details
Published in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2004-10, Vol.70 (16), p.161308.1-161308.4, Article 161308
Main Authors:	POPOVIC, Z. S, SATPATHY, S, MITCHEL, W. C
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Iii-v semiconductors Impurity and defect levels Physics
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Online Access:	Get full text
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