Low-temperature mobility of holes in Si ∕ Si Ge p -channel heterostructures

Saved in:
Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2004-11, Vol.70 (19), Article 195336
Main Authors: Quang, Doan Nhat, Tuoc, Vu Ngoc, Huan, Tran Doan, Phong, Pham Nam
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.70.195336