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Low-temperature mobility of holes in Si ∕ Si Ge p -channel heterostructures
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Published in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2004-11, Vol.70 (19), Article 195336 |
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container_issue | 19 |
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container_title | Physical review. B, Condensed matter and materials physics |
container_volume | 70 |
creator | Quang, Doan Nhat Tuoc, Vu Ngoc Huan, Tran Doan Phong, Pham Nam |
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doi_str_mv | 10.1103/PhysRevB.70.195336 |
format | article |
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language | eng |
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source | American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list) |
title | Low-temperature mobility of holes in Si ∕ Si Ge p -channel heterostructures |
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