Fast diffusion mechanism of silicon tri-interstitial defects

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-12, Vol.72 (24), Article 241306
Main Authors: Du, Yaojun A., Barr, Stephen A., Hazzard, Kaden R. A., Lenosky, Thomas J., Hennig, Richard G., Wilkins, John W.
Format: Article
Language:English
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ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.72.241306