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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al x Ga 1 − x As and In x Ga 1 − x As/GaAs quantum dots

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2011-03, Vol.83 (12), Article 121302
Main Authors: Plumhof, J. D., Křápek, V., Ding, F., Jöns, K. D., Hafenbrak, R., Klenovský, P., Herklotz, A., Dörr, K., Michler, P., Rastelli, A., Schmidt, O. G.
Format: Article
Language:English
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ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.83.121302