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Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2011-08, Vol.84 (5), Article 054410
Main Authors: Dash, S. P., Sharma, S., Le Breton, J. C., Peiro, J., Jaffrès, H., George, J.-M., Lemaître, A., Jansen, R.
Format: Article
Language:English
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ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.84.054410