Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te)

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 033305
Main Authors: Yun, Won Seok, Han, S. W., Hong, Soon Cheol, Kim, In Gee, Lee, J. D.
Format: Article
Language:English
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ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.85.033305