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Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-10, Vol.92 (16), Article 165311
Main Authors: Kuzmin, M., Laukkanen, P., Yasir, M., Mäkelä, J., Tuominen, M., Dahl, J., Punkkinen, M. P. J., Kokko, K., Hedman, H.-P., Moon, J., Punkkinen, R., Polojärvi, V., Korpijärvi, V.-M., Guina, M.
Format: Article
Language:English
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ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.92.165311