In situ X-ray diffraction studies of aluminium-induced crystallization of hydrogenated amorphous silicon

• Published in: Journal of applied crystallography 2003-10, Vol.36 (5), p.1236-1239
• Main Authors: Kishore, Ram, Hotz, Chris, Naseem, H. A., Brown, W. D.
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; crystallization; Exact sciences and technology; hydrogenated amorphous silicon; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Single-crystal and powder diffraction; Solid phase epitaxy; growth from solid phases; Structure of solids and liquids; crystallography; thin films; X-ray diffraction and scattering
• ISSN: 1600-5767; 0021-8898; 1600-5767
• DOI: 10.1107/S0021889803014912

Thin intrinsic hydrogenated amorphous silicon (α‐Si:H) films (5000 Å thickness) were deposited on (111)‐oriented n‐type silicon substrates by plasma‐enhanced chemical vapor deposition. A 4000 Å thick Al film was then deposited on the α‐Si:H film by vacuum evaporation. In situ annealing of these films was carried out in an evacuated temperature‐controlled (Model TTK) camera of an X‐ray diffractometer at a glancing angle of 5° using a thin‐film optics attachment. The crystallization behavior of aluminium‐capped α‐Si:H was monitored using the 111 silicon peak as a function of annealing temperature between 273–523 K. The results show that aluminium‐induced crystallization of α‐Si:H initiates at a temperature between 413 and 423 K. The crystallization rate increases with increasing temperature, and saturates for an anneal of 30 min at a temperature of 523 K.