2000-A/1-m Omega power MOSFETs in wafer repair technique

Power MOSFETs with a current capability of up to several thousand amperes and hence an active device area significantly exceeding the typical IC chip size can be realized only if a wafer repair technique is used. A suitable technique has been developed and used to realize circular power MOSFETs with...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1990-05, Vol.37 (5), p.1397-1401
Main Authors: Stoisiek, M., Schwarzbauer, H., Kiffe, W., Theis, D.
Format: Article
Language:English
Subjects:
Anodes
Contacts
MOS devices
MOSFET circuits
Snubbers
Switches
Switching circuits
Testing
Thyristors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Power MOSFETs with a current capability of up to several thousand amperes and hence an active device area significantly exceeding the typical IC chip size can be realized only if a wafer repair technique is used. A suitable technique has been developed and used to realize circular power MOSFETs with a diameter of 3 cm. The devices are suited to control up to 2000-A drain current and exhibit an on-resistance of R/sub DS(on)/=0.9 m Omega . To contact such a device, a pressure contact system adequate to the high-current value is used. Typical switching times are about 100 ns. Such a large-area MOSFET was used in a MOSFET-GTO (gate turnoff thyristor) cascode circuit to switch anode currents up to 1200 A/1000 V. The total switching time was significantly reduced, and a smaller snubber capacitor could be employed than with the GTO in a conventional circuit.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.108203