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Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

The construction and addressing of an experimental 30*30 actively addressed guest-host (G-H) liquid-crystal display (LCD) driven by polysilicon-based thin-film transistors (TFTs) is described. The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-08, Vol.38 (8), p.1781-1786
Main Authors: Proano, R.E., Misage, R.S., Jones, D., Ast, D.G.
Format: Article
Language:English
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Summary:The construction and addressing of an experimental 30*30 actively addressed guest-host (G-H) liquid-crystal display (LCD) driven by polysilicon-based thin-film transistors (TFTs) is described. The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in avionics. The driving voltage is 23 V, resulting in a peak load of 46 V across the TFTs during polarity reversals. The triple-gated TFTs exhibited subnanoampere leakage currents at 40 V and mobilities, corrected for dopant diffusion under the gate, of 72 cm/sup 2//V-s for electrons and 40 cm/sup 2//V-s for holes. Because no polarizers are used, the display has a 180 degrees viewing angle and is highly readable in reflective-, transmissive-, and mixed-mode operations.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.119014