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Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors
The construction and addressing of an experimental 30*30 actively addressed guest-host (G-H) liquid-crystal display (LCD) driven by polysilicon-based thin-film transistors (TFTs) is described. The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in a...
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| Published in: | IEEE transactions on electron devices 1991-08, Vol.38 (8), p.1781-1786 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c368t-84932e651e6710bdc36ca1140d2eded183224b6c9841a3c323c8ec373070c11d3 |
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| cites | cdi_FETCH-LOGICAL-c368t-84932e651e6710bdc36ca1140d2eded183224b6c9841a3c323c8ec373070c11d3 |
| container_end_page | 1786 |
| container_issue | 8 |
| container_start_page | 1781 |
| container_title | IEEE transactions on electron devices |
| container_volume | 38 |
| creator | Proano, R.E. Misage, R.S. Jones, D. Ast, D.G. |
| description | The construction and addressing of an experimental 30*30 actively addressed guest-host (G-H) liquid-crystal display (LCD) driven by polysilicon-based thin-film transistors (TFTs) is described. The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in avionics. The driving voltage is 23 V, resulting in a peak load of 46 V across the TFTs during polarity reversals. The triple-gated TFTs exhibited subnanoampere leakage currents at 40 V and mobilities, corrected for dopant diffusion under the gate, of 72 cm/sup 2//V-s for electrons and 40 cm/sup 2//V-s for holes. Because no polarizers are used, the display has a 180 degrees viewing angle and is highly readable in reflective-, transmissive-, and mixed-mode operations.< > |
| doi_str_mv | 10.1109/16.119014 |
| format | article |
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The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in avionics. The driving voltage is 23 V, resulting in a peak load of 46 V across the TFTs during polarity reversals. The triple-gated TFTs exhibited subnanoampere leakage currents at 40 V and mobilities, corrected for dopant diffusion under the gate, of 72 cm/sup 2//V-s for electrons and 40 cm/sup 2//V-s for holes. 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The design features are similar to those of high-quality, nonactive matrix addressed G-H displays used in avionics. The driving voltage is 23 V, resulting in a peak load of 46 V across the TFTs during polarity reversals. The triple-gated TFTs exhibited subnanoampere leakage currents at 40 V and mobilities, corrected for dopant diffusion under the gate, of 72 cm/sup 2//V-s for electrons and 40 cm/sup 2//V-s for holes. Because no polarizers are used, the display has a 180 degrees viewing angle and is highly readable in reflective-, transmissive-, and mixed-mode operations.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.119014</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1991-08, Vol.38 (8), p.1781-1786 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_119014 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Active matrix addressing Active matrix liquid crystal displays Active matrix technology Aerospace electronics Applied sciences Display Electronics Exact sciences and technology Liquid crystal displays Optical polarization Optical scattering Silicon Thin film transistors Voltage |
| title | Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors |
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