Effects of shielded-gate structure on on-resistance of the SIT with a high-purity channel region

A shielded-gate structure, is proposed to improve the on-resistance of the static induction transistor (SIT) with a high-purity channel. The results of two-dimensional simulation reveal that the introduction of this structure can reduce the on-resistance of the high-purity channel SIT as well as sup...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1992-05, Vol.39 (5), p.1257-1260
Main Authors: Yano, K., Kim, C.-W., Kimura, M., Tanaka, A., Motoyama, S.-I., Sukegawa, T.
Format: Article
Language:English
Subjects:
Applied sciences
Boron
CMOS logic circuits
Contact resistance
Doping profiles
Electrical resistance measurement
Electron devices
Electronics
Exact sciences and technology
Power electronics
Q measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Transistors
Very large scale integration
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Summary:A shielded-gate structure, is proposed to improve the on-resistance of the static induction transistor (SIT) with a high-purity channel. The results of two-dimensional simulation reveal that the introduction of this structure can reduce the on-resistance of the high-purity channel SIT as well as support sufficient depletion in the channel at a small reverse gate voltage to ensure the static induction operation.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.129121