Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors

The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Measured results indicate that for GaInP/GaAs HBTs the current gain at collector current densities >0.1 A/cm/sup 2/ remains nearly constant, independent of t...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1993-07, Vol.40 (7), p.1351-1353
Main Authors: Liu, W., Fan, S.-K., Henderson, T., Davito, D.
Format: Article
Language:English
Subjects:
Applied sciences
Composite materials
Current density
Current measurement
Data mining
Doping
Electronics
Exact sciences and technology
Gain measurement
Gallium arsenide
Heterojunction bipolar transistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Temperature dependence
Transistors
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Summary:The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Measured results indicate that for GaInP/GaAs HBTs the current gain at collector current densities >0.1 A/cm/sup 2/ remains nearly constant, independent of the substrate temperature for AlGaAs/GaAs HBTs. These current gain characteristics are examined, and the origin of the difference is attributed to the difference of the valence-band discontinuities in the base-emitter heterojunctions of the two HBTs.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.216446