High-performance Al/sub 0.15/Ga/sub 0.85/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors grown by OMCVD

High-performance In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors using a thin lattice-mismatched Al/sub x/Ga/sub 1-x/As surface layer to enhance the Schottky-barrier height have been fabricated and characterized with 1.3- mu m laser sources. The dark leakage currents were reduced...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-04, Vol.36 (4), p.659-662
Main Authors: Hong, W.P., Chang, G.K., Bhat, R.
Format: Article
Language:English
Subjects:
Absorption
Current measurement
Detectors
Gain measurement
Gallium arsenide
Leak detection
Leakage current
Photoconductivity
Photodetectors
Surface emitting lasers
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Summary:High-performance In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors using a thin lattice-mismatched Al/sub x/Ga/sub 1-x/As surface layer to enhance the Schottky-barrier height have been fabricated and characterized with 1.3- mu m laser sources. The dark leakage currents were reduced by a factor of five times with Al/sub 0.15/Ga/sub 0.85/As, when compared with GaAs or lattice-matched In/sub 0.52/Al/sub 0.48/As. The extrinsic quantum efficiency of a detector with a 1.0- mu m absorption region was measured to be 40%. Photocurrent measurement under various illumination powers showed a linear responsivity of 0.4 A/W, and no low-frequency gain was observed. Impulse measurements showed an FWHM (full width at half maximum) of about 60 ps with no appreciable diffusion tails.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.22471